Strength Evaluation Technique for Dislocation Generation in Si Substrate using Ball Indenter.
نویسندگان
چکیده
منابع مشابه
Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy
InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The dislocations were trapped within a thin InAs epilayer. The obtained 90-nm-wide InAs nanofins with ...
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ژورنال
عنوان ژورنال: TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A
سال: 1997
ISSN: 0387-5008,1884-8338
DOI: 10.1299/kikaia.63.183